The appearance of topologically protected spin-momentum locked surface states in topological insulators gives rise to robust room temperature spin currents making them ideal candidates for the realization of spintronic devices. New methods are needed to access and manipulate such currents with timescales that are compatible with modern electronics. Here we reveal that an optically induced long-lived (~10 ns), spin-polarized surface state excitation in topological insulators can be easily tuned in both magnitude and duration. Time-resolved angle-resolved photoemission spectroscopy, together with a quantitative model, reveals the ideal conditions for a surface photovoltage in two different topological insulators. Our model predicts that the reported effects are an intrinsic property of topological insulators, as long as the chemical potential falls within the band gap. This work demonstrates that persistent excited topological surface states are photon-accessible and easily tuned in both magnitude and duration, merging photonics- and spintronics-based devices in the same material.
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Lin, Chiu-Yun ; Gotlieb, Kenneth ; Jozwiak, Chris ; Sobota, Jonathan A. ; Shen, Zhi-Xun ; Analytis, James G. ; Hussain, Zahid ; Lanzara, Alessandra ( , Physical Review B)
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Gotlieb, Kenneth ; Li, Zhenglu ; Lin, Chiu-Yun ; Jozwiak, Chris ; Ryoo, Ji Hoon ; Park, Cheol-Hwan ; Hussain, Zahid ; Louie, Steven G. ; Lanzara, Alessandra ( , Physical Review B)
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Chien, TeYu ; He, Xiaobo ; Mo, Sung-Kwan ; Hashimoto, Makoto ; Hussain, Zahid ; Shen, Zhi-Xun ; Plummer, E. W. ( , Physical Review B)
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Xu, Cai-Zhi ; Chan, Yang-Hao ; Chen, Yige ; Chen, Peng ; Wang, Xiaoxiong ; Dejoie, Catherine ; Wong, Man-Hong ; Hlevyack, Joseph Andrew ; Ryu, Hyejin ; Kee, Hae-Young ; et al ( , Physical Review Letters)
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Onishi, Seita ; Ugeda, Miguel M. ; Zhang, Yi ; Chen, Yi ; Ojeda‐Aristizabal, Claudia ; Ryu, Hyejin ; Mo, Sung‐Kwan ; Hussain, Zahid ; Shen, Zhi‐Xun ; Crommie, Michael F. ; et al ( , physica status solidi (b))
Superconductivity in monolayer niobium diselenide (NbSe2) on bilayer graphene is studied by electrical transport. Monolayer NbSe2is grown on bilayer graphene by molecular beam epitaxy and capped with a selenium film to avoid degradation in air. The selenium capped samples have
T C = 1.9 K.In situ measurements down to 4 K in ultrahigh vacuum show that the effect of the selenium layer on the transport is negligible. The superconducting transition and upper critical fields in air exposed and selenium capped samples are compared.Schematic of monolayer NbSe2/bilayer graphene with selenium capping layer and electrical contacts.